System and method for biasing a power amplifier

ABSTRACT

A system and method for biasing a power amplifier includes a power amplifier having a driver stage and an output stage, the driver stage having a plurality of driver devices, a bias current source configured to deliver a bias current to each of the plurality of driver devices, and a current directing element configured to receive the bias current and selectively bias each of the plurality of driver devices based on a reference voltage and a system voltage.

BACKGROUND

Portable communication devices, such as cellular telephones, use one ormore power amplifiers to amplify an information signal prior totransmission. Modern communications systems use advanced modulationschemes, which are both phase and amplitude modulated, to boostinformation transmission rates, generally at the expense of powerconsumption. Generally, a linear power amplifier is used for systemsthat use phase and amplitude modulation (such as systems that employcode division multiple access (CDMA) or enhanced data rates for GSMevolution (EDGE)), while a non-linear power amplifier is used forsystems that employ phase only modulation (i.e., a constant envelopemodulation system such as Gaussian mean shift keying (GMSK) modulation).A linear power amplifier has significantly lower power efficiency than anon-linear power amplifier. In some communication systems, such as CDMAand wideband CDMA (WCDMA), power consumption is further increasedbecause the linear power amplifier has to operate properly over a widedynamic range due to CDMA/WCDMA power control requirements. For example,the dynamic range of a WCDMA system can be on the order of −50 dBm to 27dBm.

The power amplifier is typically implemented as one or more stages oftransistors and related circuitry. In most applications, the operatingpoint of the power amplifier is set by providing a bias current orvoltage to at least one of the terminals of at least one of the stagesof the power amplifier. In the case of a bipolar junction transistor(BJT) the bias current is normally applied to the base terminal of thetransistor to control how the transistor will conduct between itscollector and emitter terminals. In a typical implementation, the poweramplifier comprises one or two driver stages followed by an outputstage.

A commonly used method is to control bias current and collector voltageby incorporating a bias current controller and a voltage regulator,sometimes referred to as a “buck-boost” converter. By separatelycontrolling the bias current and collector voltage, the power efficiencyof the power amplifier can be optimized.

In some implementations, the radio frequency input to the poweramplifier can be provided from a transceiver to one or more of thedriver stages. The transceiver is typically located on a separatestructure from the power amplifier. In some power amplifierimplementations, the driver stage of the power amplifier may containmultiple instances of the driver circuitry so that the power amplifiercan be used in more than one communication topology. For example, asingle power amplifier device can be implemented to operate in anon-linear topology, such GMSK, and in a linear topology, such asCDMA/WCDMA or EDGE. The non-linear amplifier driver circuitry can beoptimized for low power, high gain operation, while the linear amplifierdriver circuitry can be optimized for high power, low gain operation.

Unfortunately, the transceiver that drives the power amplifier istypically inefficient at lower power levels, thereby making it difficultfor a single transceiver device to operate efficiently with the multipleinstances of the power amplifier driver circuitry.

Therefore, it would be desirable to improve the efficiency of acommunication system to increase battery time, namely, cellular phonetalk time.

SUMMARY

Embodiments of the invention include a system for biasing a poweramplifier comprising a power amplifier having a driver stage and anoutput stage, the driver stage having a plurality of driver devices, abias current source configured to deliver a bias current to each of theplurality of driver devices, and a current directing element configuredto receive the bias current and selectively bias each of the pluralityof driver devices based on a reference voltage and a system voltage.

Other embodiments are also provided. Other systems, methods, features,and advantages of the invention will be or become apparent to one withskill in the art upon examination of the following figures and detaileddescription. It is intended that all such additional systems, methods,features, and advantages be included within this description, be withinthe scope of the invention, and be protected by the accompanying claims.

BRIEF DESCRIPTION OF THE FIGURES

The invention can be better understood with reference to the followingfigures. The components within the figures are not necessarily to scale,emphasis instead being placed upon clearly illustrating the principlesof the invention. Moreover, in the figures, like reference numeralsdesignate corresponding parts throughout the different views.

FIG. 1 is a block diagram illustrating a simplified portablecommunication device.

FIG. 2 is a schematic diagram illustrating an embodiment of the poweramplifier of FIG. 1.

FIG. 3 is a graphical illustration showing the bias current provided bythe differential amplifier of FIG. 2 as a function of the system voltagelevel, V_(CC).

FIG. 4 is a graphical illustration comparing a gain profile of the poweramplifier of FIG. 2 with a gain profile of a power amplifier that lacksthe bias architecture shown in FIG. 2.

FIG. 5 is a flow chart describing the operation of an embodiment of themethod of biasing a power amplifier.

DETAILED DESCRIPTION

Although described with particular reference to a portable transceiver,the system and method for biasing a power amplifier can be implementedin any device that uses a power amplifier. Further, in particularembodiments, the transistors to be described below comprise bipolarjunction transistors (referred to as a BJT), which includesheterojunction bipolar junction transistors (referred to as an HBT) andfield effect transistors (referred to as a FET) that are fabricatedusing what is referred to as the bipolar complementary metal oxidesemiconductor (BiCMOS) process. Further, in alternative embodiments, thecircuitry to be described below can be fabricated using an integratedbipolar-field effect transistor (BIFET) process utilizing the relativelower turn-on voltage of FET transistors.

The system and method for biasing a power amplifier reduces the totalsystem current by maximizing power amplifier gain at lower power levelswithout consuming additional current. Thus, the output of a transceivercoupled to the power amplifier can be reduced at low power levels. As aresult, the transceiver consumes less current and the system currentconsumption is reduced thus increasing cellular phone talk time.

The system and method for biasing a power amplifier is generallyimplemented in hardware. However, one or more of the signals thatcontrol the system and method for biasing a power amplifier can beimplemented in software, or a combination of hardware and software. Whenimplemented in hardware, the system and method for biasing a poweramplifier can be implemented using specialized hardware elements. Whenone or more of the control signals for the system and method for biasinga power amplifier are generated at least partially in software, thesoftware portion can be used to precisely control the operating aspectsof various components in a power amplifier bias circuit associated witha communications device. The software can be stored in a memory andexecuted by a suitable instruction execution system (microprocessor).The hardware implementation of the system and method for biasing a poweramplifier can include any or a combination of the followingtechnologies, which are all well known in the art: discrete electroniccomponents, a discrete logic circuit(s) having logic gates forimplementing logic functions upon data signals, an application specificintegrated circuit having appropriate logic gates, a programmable gatearray(s) (PGA), a field programmable gate array (FPGA), a separate,specially designed integrated circuit for biasing purposes, etc.

FIG. 1 is a block diagram illustrating a simplified portablecommunication device 100. In an embodiment, the portable communicationdevice 100 can be a portable cellular telephone. Embodiments of thesystem and method for biasing a power amplifier can be implemented inany device having an RF transmitter, and in this example, areimplemented in a portable communication device 100. The portablecommunication device 100 illustrated in FIG. 1 is intended to be asimplified example of a cellular telephone and to illustrate one of manypossible applications in which the system and method for biasing a poweramplifier can be implemented. One having ordinary skill in the art willunderstand the operation of a portable cellular telephone, and, as such,implementation details are omitted. The portable communication device100 includes a baseband subsystem 110, a transceiver 120, and a frontend module (FEM) 130. Although not shown for clarity, the transceiver120 generally includes modulation and upconversion circuitry forpreparing a baseband information signal for amplification andtransmission, and includes filtering and downconversion circuitry forreceiving and downconverting a received RF signal to a basebandinformation signal to recover data. The details of the operation of thetransceiver 120 are known to those skilled in the art.

The baseband subsystem generally includes a processor 102, which can bea general purpose or special purpose microprocessor, memory 114,application software 104, analog circuit elements 106, digital circuitelements 108 and power amplifier software 155, coupled over a system bus112. The system bus 112 can include the physical and logical connectionsto couple the above-described elements together and enable theirinteroperability.

An input/output (I/O) element 116 is connected to the baseband subsystem110 over connection 124, a memory element 118 is coupled to the basebandsubsystem 110 over connection 126, and a power source 122 is connectedto the baseband subsystem 110 over connection 128. The I/O element 116can include, for example, a microphone, a keypad, a speaker, a pointingdevice, user interface control elements, and any other device or systemthat allows a user to provide input commands and receive outputs fromthe portable communication device 100.

The memory 118 can be any type of volatile or non-volatile memory, andin an embodiment, can include flash memory. The memory element 118 canbe permanently installed in the portable communication device 100, orcan be a removable memory element, such as a removable memory card.

The power source 122 can be, for example, a battery, or otherrechargeable power source, or can be an adaptor that converts AC powerto the correct voltage used by the portable communication device 100. Inan embodiment, the power source can be a battery that provides a nominalvoltage output of approximately 3.0 volts (V). However, the outputvoltage range of the power source can range from approximately 1.0 to5.0 V.

The processor 102 can be any processor that executes the applicationsoftware 104 to control the operation and functionality of the portablecommunication device 100. The memory 114 can be volatile or non-volatilememory, and in an embodiment, can be non-volatile memory that stores theapplication software 104. If portions of the control logic of the systemand method for biasing a power amplifier are implemented in software,then the baseband subsystem 110 also includes power amplifier software155, which may cooperate with control logic that can be executed by themicroprocessor 102, or by another processor, to control at least someaspects of the operation of the system and method for biasing a poweramplifier and/or the power amplifier 200 to be described below.

The analog circuitry 106 and the digital circuitry 108 include thesignal processing, signal conversion, and logic that convert an inputsignal provided by the I/O element 116 to an information signal that isto be transmitted. Similarly, the analog circuitry 106 and the digitalcircuitry 108 include the signal processing, signal conversion, andlogic that convert a received signal provided by the transceiver 120 toan information signal that contains recovered information. The digitalcircuitry 108 can include, for example, a digital signal processor(DSP), a field programmable gate array (FPGA), or any other processingdevice. Because the baseband subsystem 110 includes both analog anddigital elements, it is sometimes referred to as a mixed signal device(MSD).

In an embodiment, the front end module 130 includes a transmit/receive(TX/RX) switch 142 and a power amplifier 200. The TX/RX switch 142 canbe a duplexer, a diplexer, or any other physical or logical device orcircuitry that separates a transmit signal and a receive signal.Depending on the implementation of the portable communication device100, the TX/RX switch 142 may be implemented to provide half-duplex orfull-duplex functionality. A transmit signal provided by the transceiver120 over connection 136 is directed to the power amplifier 200. As willbe described in detail below, the power amplifier 200 can be implementedto include a bias element for generating a bias signal, typically in theform of a bias current that can be based on system voltage and areference voltage, to the power amplifier. The output of the poweramplifier 200 is provided over connection 138 to the TX/RX switch 142,and then to an antenna 146 over connection 144.

A signal received by the antenna 146 is provided over connection 144 tothe TX/RX switch 142, which provides the received signal over connection134 to the transceiver 120.

In an embodiment, the baseband subsystem 110 provides one or morecontrol signals to the power amplifier 200 over connection 152.Connection 152 can be implemented as discrete connections, or as a bushaving multiple signals.

FIG. 2 is a schematic diagram illustrating an embodiment of the poweramplifier 200 of FIG. 1. The power amplifier 200 comprises a poweramplifier portion 210 and a bias controller 250. Although shownschematically as part of the power amplifier 200, the bias controller250 may be fabricated and implemented separately from the poweramplifier portion 210.

The power amplifier portion 210 includes a number of power amplifierstages. In the embodiment shown in FIG. 2, the power amplifier portion210 comprises a driver stage 206 and an output stage 230. However, inalternative embodiments, more than one driver stage may be implemented.Typically, one or two driver stages are implemented with a single outputstage. The driver stage 206 is capable of operation in more than onetransmission methodology and, as such, comprises transistors 207 and208. In an embodiment, the driver stage 206 can operate in the GMSKtransmission methodology and in the WCDMA/EDGE transmission methodology.While differences exist within each broad methodology, the GMSKtransmission methodology generally uses power amplification having anon-linear control characteristic and the WCDMA/EDGE transmissionmethodology generally uses power amplification having a linear controlcharacteristic. In the embodiment shown in FIG. 2, the transistor 207 isa high gain device particularly suited for amplifying signals in theGMSK transmission scheme and the transistor 208 is a lower gain devicethat is particularly suited for amplifying signals in the WCDMA or EDGEtransmission scheme.

A radio frequency (RF) information signal is provided over connection136 from the transceiver 120 of FIG. 1. The RF signal on connection 136is passed through a matching circuit 202. As known to those skilled inthe art, the matching circuit 202 may comprise a combination ofresistive, capacitive and inductive elements that match the impedance ofthe signal on connection 136 to the impedance at the input of the driverstage 206 on connection 204. The RF input signal on connection 204 isprovided concurrently to the transistors 207 and 208 through capacitors214 and 212, respectively. The capacitors 214 and 212 provide a directcurrent (DC) blocking function. In the embodiment shown in FIG. 2, thetransistors 207 and 208 are each implemented as a bipolar junctiontransistor (BJT), but this need not be limiting. Other transistor devicetechnologies can be implemented.

The transistor 207 is connected to a bias circuit 218. The bias iscircuit 218 is connected to the base terminal 216 of the transistor 207.Similarly, a bias circuit 219 is connected to the base terminal 217 ofthe transistor 208. As known to those skilled in the art, the biascircuits 218 and 219 contain circuitry to provide a bias current to thetransistors 207 and 208, respectively. An example of the bias circuits218 and 219 can be found in U.S. Pat. No. 6,873,211, which isincorporated herein by reference.

The RF output of the driver stage 206 is taken from the collectorterminal of the transistor 207 and the collector terminal of thetransistor 208, which are tied together at node 222. The output of thedriver stage 206 is provided to a matching circuit 224. The matchingcircuit 224 is designed to provide an impedance match between the RFsignal on connection 222 and the RF signal on connection 226. The RFsignal on connection 226 is provided through a DC blocking capacitor 227to the base terminal 229 of the transistor 232. A bias signal is appliedto the base terminal 229 of the transistor 232 from bias circuitry 228.An example of the bias circuit 228 can be found in U.S. Pat. No.6,873,211, which is incorporated herein by reference. The RF output ofthe output stage 230 is provided from the collector terminal of thetransistor 232 over connection 234. The RF output signal on connection234 is provided to matching circuit 236, which matches the impedance ofthe RF signal on connection 234 with the TX/RX switch impedance (notshown) on connection 138.

A system voltage, V_(CC), is provided on connection 269 by a voltagesource 267. In an embodiment, a nominal system voltage can beapproximately 3.0V. The collector terminal 234 of the transistor 232 iscoupled to the system voltage, V_(CC), through an inductor 237. Thecollector terminal 222 of the transistor 207 and the collector terminal222 of the transistor 208 are coupled through an inductor 277 to thesystem voltage, V_(CC), on connection 269.

The bias controller 250 comprises a mode based current generator 252, areference voltage source 254, a current source 257, a current source 266and a differential amplifier 259.

The mode based current generator 252 receives a control current,I_(CONTROL), from a current source 268 over connection 272 and allowsthe current source 257 to develop a first reference current, I_(REF)_(—) ₁, and allows the current source 266 to develop a second referencecurrent, I_(REF) _(—) ₂. These reference currents are directlyproportional to I_(CONTROL). The scaling between I_(REF) _(—) ₁ andI_(REF) _(—) ₂ depends on the mode of operation (e.g., GMSK, EDGE orWCDMA) and can be implemented to suit a variety of applications.

The current source 266 provides a bias control current, I_(REF) _(—) ₂,over connection 278 to the bias circuit 228. The current source 257provides a bias control current, I_(REF) _(—) ₁, over connection 258 tothe differential amplifier 259. The differential amplifier 259 comprisesa transistor device 262 and a transistor 264. The transistor 262 and thetransistor 264 can be implemented as field effect transistor (FET)devices. However, other transistor device technologies may beimplemented.

The gate terminal of the transistor 262 is coupled to a referencevoltage, V_(REF), provided by the voltage source 254 over connection256. In an embodiment, a nominal reference voltage, V_(REF), can beapproximately 1.8V. The gate terminal of the transistor 264 receives thesystem voltage, V_(CC), over connection 269. The source terminal of thetransistor 262 and the source terminal of the transistor 264 are coupledtogether at connection 258 and receive the current, I_(REF) _(—) ₁. Thedrain terminal of the transistor 262 is coupled to the bias circuit 219over connection 274 and the drain terminal of the transistor 264 iscoupled to the bias circuit 218 over connection 276.

In accordance with an embodiment of the system and method for biasing apower amplifier, the bias current, I_(REF) _(—) ₁, provided overconnection 258 is provided through the differential amplifier 259 andcommunicated to connection 274 and connection 276 based on a differencebetween the reference voltage, V_(REF), applied to the gate of thetransistor 262 and the system voltage, V_(CC), applied to the gate ofthe transistor 264. The differential amplifier acts as a “soft switch”to “steer” the current on connection 258 to the connections 274 and 276based on the relative levels of V_(REF) and V_(CC). By using the systemvoltage, V_(CC), and an available reference voltage, V_(REF), the systemand method for biasing a power amplifier can be incorporated into anexisting power amplifier bias profile without using an additional logicpin, thus simplifying the transceiver logic design.

The current directed onto connection 274 is referred to as I_(L), and isthe portion of I_(REF) _(—) ₁ that is steered by the transistor 262. Thecurrent I_(L) biases the transistor 208. The current directed ontoconnection 276 is referred to as I_(G), and is the portion of I_(REF)_(—) ₁ that is steered by the transistor 264. The current I_(G) biasesthe transistor 207.

At full or near-full transmit power the transistor 208 has a betternoise floor and provides better linearity (e.g., better adjacent channelpower rejection (ACPR)) than does the transistor 207. The drawback ofusing the transistor 208 at low power levels is that it providesrelatively low gain under similar bias conditions. In such a mode, thetransceiver 120 (FIG. 1) has to output additional power to compensatefor the low gain, and therefore consumes more system current.

At low transmit power levels, the differential amplifier 259 directsless current, I_(L), to the transistor 208 and more current, I_(G), tothe transistor 207. In this manner, and in certain implementations, theoverall gain of the power amplifier 200 can be increased by about 6 dBwithout decreasing the efficiency of the power amplifier. This is sobecause the transistor 208 is sized differently than the transistor 207and typically incorporates feedback to improve the noise floor andlinearity (ACPR) at the expense of lower gain. The transistor 207, onthe other hand, is sized for higher gain and is not limited by feedbackcircuitry, thereby allowing the transceiver 120 (FIG. 1) to reduce itspower output level at low transmit power levels if the transistor 207 isused at the low power level.

At full power, the system voltage, V_(CC), is about 3V and substantiallyall of the current, I_(REF) _(—) ₁, from the differential amplifier 259flows through the transistor 262 as the current, I_(L), to bias thetransistor 208. As the power level steps down, the system voltage,V_(CC), becomes smaller and the differential amplifier 259 startssteering a fraction of the current, I_(REF) _(—) ₁, through thetransistor 264 as the current, I_(G), to bias the transistor 207. WhenV_(CC)=V_(REF), the transistor 207 and the transistor 208 each receiveone half of the current, I_(REF) _(—) ₁. Further decreasing V_(CC)causes more current, I_(G), to flow into the base of the transistor 207.

Because the transistor 207 has high gain at low power, at lower systemvoltage levels it is desirable to allow the transistor 207 to befavorably biased as compared to the transistor 208, so that thetransistor 207 can use its high gain at low power to allow thetransceiver 120 to provide an RF input signal at a lower system voltagelevel. In this manner, while at lower system voltage levels, the outputof the transceiver 120 (FIG. 1) can be reduced, thereby lowering theoverall system current consumption. As the system voltage level V_(CC)increases, the difference between V_(REF) and V_(CC) changes such thatthe current, I_(REF) _(—) ₁, on connection 258 is directed through thetransistor 262 and onto connection 274, so that at higher system voltagelevels, the transistor 208 will be favorably biased, thereby using thetransistor 208 as the driver stage at higher system voltage levels.

Further, even at higher system voltage levels, providing a certainamount current into the transistor 207 is beneficial to the overalloperation of the driver stage 206. Providing even a small amount ofcurrent, I_(G), to bias the transistor 207 at higher system voltagelevels improves the power added efficiency (PAE) and the adjacentchannel power rejection (ACPR) of the transistor 208 under varying loadconditions. In an embodiment, it was noticed that injecting 80 microamperes (μA) of bias current, I_(G), to the transistor 207 results in˜3% PAE improvement in the transistor 208 along with good ACPR.

Further, using the differential amplifier 259 as a “soft switch”eliminates potential signal phase and gain discontinuities that wouldlikely occur when using a discrete on-off switch to control the biassignal provided to the transistor 207 and to the transistor 208. It maybe difficult for the system to compensate for these discrete on-offswitch discontinuities in order to maintain signal integrity and/orappropriate power control stability/tolerance.

FIG. 3 is a graphical illustration showing the bias current provided bythe differential amplifier 259 as a function of the system voltage levelV_(CC). The abscissa 302 shows the system voltage, V_(CC), while theordinate 304 shows the bias current provided by the differentialamplifier 259. The trace 306 represents the bias current I_(G) onconnection 276 while the trace 308 illustrates the bias current I_(L) onconnection 274.

When the system voltage, V_(CC), is equal to the reference voltage,V_(REF), the current, I_(L), through the transistor 262 is equal to thecurrent, I_(G), through the transistor 264. As the system voltage,V_(CC), drops below the reference voltage, V_(REF), significantly morecurrent flows through connection 276 to bias the transistor 207.Conversely, as the system voltage, V_(CC), rises above the referencevoltage, V_(REF), significantly more current flows through connection274 to bias the transistor 208. In this manner, a soft switchingfunction is provided by the differential amplifier 259 that allows thefavorable low-power, high gain attributes of the transistor 207 to beused as the driver stage at low system voltage levels, and allows thefavorable high-power, low gain attributes of the transistor 208 to beused as the driver stage at high system voltage levels. In this manner,at lower system voltage levels, the low-power, high gain attributes ofthe transistor 207 allow the power output of the transceiver 120 to besignificantly less than the power output of the transceiver 120 when thetransistor 208 is used as the driver stage. In this manner, thelow-power, high gain attributes of the transistor 207 allow the poweroutput of the transceiver 120 to be minimized, thereby reducing overallsystem power consumption.

FIG. 4 is a graphical illustration comparing a gain profile of the poweramplifier 200 with a gain profile of a power amplifier that lacks thebias architecture shown in FIG. 2. The abscissa 402 shows poweramplifier output power, Pout, in dBm, while the ordinate 404 shows poweramplifier gain in dB. The trace 406 illustrates the gain profileprovided by the power amplifier 200. The trace 408 illustrates a gainprofile of a power amplifier that lacks the bias architecture shown inFIG. 2. Compared to the gain profile 408, the gain profile 406 provideshigher gain at lower power output levels.

FIG. 5 is a flowchart illustrating the operation of an embodiment of amethod for biasing a power amplifier. The blocks in the flowchart 500can be performed in or out of the order shown, and can also be performedin parallel.

In block 502 a bias current source is provided. For example, the biascurrent source can be provided by the mode-based current generator 252and the current source 257 of FIG. 2.

In block 504, the bias current provided by the current source 257 iscontrolled based on the difference between the reference voltage,V_(REF), provided by the voltage source 254 and the system voltage,V_(CC), provided over connection 269.

In block 506, the differential amplifier 259 provides the controlledbias current to the power amplifier driver 206, depending upon thedifference between the voltage reference, V_(REF) and the systemvoltage, V_(CC).

While various embodiments of the invention have been described, it willbe apparent to those of ordinary skill in the art that many moreembodiments and implementations are possible that are within the scopeof this invention.

1. A system for biasing a power amplifier, comprising: a power amplifierhaving a driver stage and an output stage, the driver stage having aplurality of driver devices; a bias current source configured to delivera bias current to each of the plurality of driver devices; and a currentdirecting element configured to receive the bias current and selectivelybias each of the plurality of driver devices based on a referencevoltage and a system voltage.
 2. The system of claim 1, in which: afirst driver device is sized to provide a low power, high gain output;and a second driver device is sized to provide a high power, low gainoutput.
 3. The system of claim 2, in which: the current directingelement directs a major portion of the bias current to the first driverdevice when the system voltage is less than the reference voltage; andthe current directing element directs a major portion of the biascurrent to the second driver device when the system voltage exceeds thereference voltage.
 4. The system of claim 3, further comprising atransceiver that provides a radio frequency (RF) input signal to thedriver stage, wherein a power level of the RF input signal is lower whenthe current directing element directs a major portion of the biascurrent to the first driver device than when the current directingelement directs a major portion of the bias current to the second driverdevice.
 5. A portable transceiver having a system for biasing a poweramplifier, comprising: a transceiver; a power amplifier operativelycoupled to the transceiver, the power amplifier having a driver stageand an output stage, the driver stage having a plurality of driverdevices; a bias current source configured to deliver a bias current toeach of the plurality of driver devices; and a current directing elementconfigured to receive the bias current and selectively bias each of theplurality of driver devices based on a reference voltage and a systemvoltage.
 6. The portable transceiver of claim 5, in which: a firstdriver device is sized to provide a low power, high gain output; and asecond driver device is sized to provide a high power, low gain output.7. The portable transceiver of claim 6, in which: the current directingelement directs a major portion of the bias current to the first driverdevice when the system voltage is less than the reference voltage; andthe current directing element directs a major portion of the biascurrent to the second driver device when the system voltage exceeds thereference voltage.
 8. The portable transceiver of claim 7, wherein thetransceiver provides a radio frequency (RF) input signal to the driverstage, and a power level of the RF input signal is lower when thecurrent directing element directs a major portion of the bias current tothe first driver device than when the current directing element directsa major portion of the bias current to the second driver device.
 9. Amethod for biasing a power amplifier, comprising: providing a poweramplifier having a driver stage and an output stage, the driver stagehaving a plurality of driver devices; providing a bias current to eachof the plurality of driver devices; and selectively biasing each of theplurality of driver devices based on a reference voltage and a systemvoltage.
 10. The method of claim 9, further comprising: using a firstdriver device for a low power, high gain output; and using a seconddriver device for a high power, low gain output.
 11. The methodtransceiver of claim 10, further comprising: directing a major portionof the bias current to the first driver device when the system voltageis less than the reference voltage; and directing a major portion of thebias current to the second driver device when the system voltage exceedsthe reference voltage.
 12. The method of claim 11, further comprising:providing a radio frequency (RF) input signal to the driver stage;providing a lower power level of the RF input signal when a majorportion of the bias current is directed to the first driver device.